SCT2450KEC
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Resistance | 585mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 85W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 585m Ω @ 3A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Input Capacitance (Ciss) (Max) @ Vds | 463pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 18V |
| Rise Time | 17ns |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Fall Time (Typ) | 34 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 22V |
| Drain to Source Breakdown Voltage | 1.2kV |
| Pulsed Drain Current-Max (IDM) | 25A |
| Nominal Vgs | 4 V |
| Height | 5.03mm |
| Length | 15.9mm |
| Width | 20.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
