SCT2H12NZGC11
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PFM, SC-93-3 |
| Number of Pins | 3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | SiCFET (Silicon Carbide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 35W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 35W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 3.7A |
| Threshold Voltage | 2.8V |
| Gate to Source Voltage (Vgs) | 22V |
| Drain to Source Breakdown Voltage | 1.7kV |
| Pulsed Drain Current-Max (IDM) | 9.2A |
| Max Junction Temperature (Tj) | 175°C |
| Height | 26.5mm |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
