Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Power Dissipation-Max | 427W |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 22.1m Ω @ 47A, 18V |
Vgs(th) (Max) @ Id | 5.6V @ 23.5mA |
Input Capacitance (Ciss) (Max) @ Vds | 2884pF @ 500V |
Current - Continuous Drain (Id) @ 25°C | 118A Tc |
Gate Charge (Qg) (Max) @ Vgs | 172nC @ 18V |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 18V |
Vgs (Max) | +22V, -4V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Operating Temperature | 175°C TJ |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin (Sn) |
Technology | SiCFET (Silicon Carbide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |