SCT3120ALGC11
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | SiCFET (Silicon Carbide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 103W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 103W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 156m Ω @ 6.7A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
| Current - Continuous Drain (Id) @ 25°C | 21A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 52A |
| Max Junction Temperature (Tj) | 175°C |
| Height | 25.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
