SD57120
| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Screw |
| Package / Case | M252 |
| Number of Pins | 5 |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 236W |
| Terminal Form | FLAT |
| Current Rating | 14A |
| Frequency | 960MHz |
| Base Part Number | SD57120 |
| Pin Count | 2 |
| JESD-30 Code | R-PDFM-F4 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 236W |
| Case Connection | SOURCE |
| Current - Test | 800mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 65V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Gain | 14dB |
| Max Output Power | 120W |
| Drain to Source Breakdown Voltage | 65V |
| Input Capacitance | 169pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| Min Breakdown Voltage | 65V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
