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SE12DD-M3/I

DIODE GEN PURP 400V 3.2A TO263AC


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-SE12DD-M3/I
  • Package: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Datasheet: PDF
  • Stock: 844
  • Description: DIODE GEN PURP 400V 3.2A TO263AC (Kg)

Details

Tags

Parameters
Operating Temperature - Junction -55°C~175°C
Application GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max) 200V
Max Reverse Voltage (DC) 400V
Average Rectified Current 3.2A
Number of Phases 1
Reverse Recovery Time 3 μs
JEDEC-95 Code TO-263AC
Capacitance @ Vr, F 90pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 125A
Reverse Current-Max 20μA
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab) Variant
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, eSMP®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.80
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 20μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 12A
Case Connection CATHODE
See Relate Datesheet

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