SE20AFGHM3/6A
| Parameters | |
|---|---|
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 400V |
| Average Rectified Current | 1.3A |
| Number of Phases | 1 |
| Reverse Recovery Time | 1.2 μs |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 400V |
| Capacitance @ Vr, F | 12pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 35A |
| Reverse Voltage | 400V |
| Recovery Time | 1.2 μs |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-221AC, SMA Flat Leads |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 400V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 2A |
| Forward Current | 2A |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 35A |
| Application | GENERAL PURPOSE |
| Current - Average Rectified (Io) | 1.3A DC |
See Relate Datesheet
