Parameters | |
---|---|
Lead Free | Lead Free |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 300mOhm |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 66W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 66W |
Turn On Delay Time | 13 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 300m Ω @ 5.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 10.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 10.5A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | -100V |
Pulsed Drain Current-Max (IDM) | 42A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |