Parameters | |
---|---|
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Rise Time | 25ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 55 ns |
Turn-Off Delay Time | 105 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 3 |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2013 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta 35W Tc |
Element Configuration | Single |
Power Dissipation | 1W |
Turn On Delay Time | 9.5 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 275m Ω @ 5.5A, 10V |