Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 48 ns |
Turn-Off Delay Time | 60 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 3 |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2013 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Power Dissipation-Max | 1W Ta 23W Tc |
Element Configuration | Single |
Power Dissipation | 23W |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 51m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta |