Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 208W |
Current Rating | 10A |
Base Part Number | SG*10N60 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 75W |
Input Type | Standard |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 16A |
Reverse Recovery Time | 42 ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.2V |
Max Breakdown Voltage | 600V |
Turn On Time | 49 ns |
Test Condition | 300V, 10A, 20 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
Turn Off Time-Nom (toff) | 284 ns |
Gate Charge | 30nC |
Current - Collector Pulsed (Icm) | 30A |
Td (on/off) @ 25°C | 15ns/36ns |
Switching Energy | 141μJ (on), 215μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 8V |
Fall Time-Max (tf) | 220ns |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |