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SGW23N60UFDTM

SGW23N60UFDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-SGW23N60UFDTM
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 510
  • Description: SGW23N60UFDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Max Collector Current 23A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Collector Emitter Saturation Voltage 2.1V
Test Condition 300V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Gate Charge 49nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/60ns
Switching Energy 115μJ (on), 135μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 12A
Base Part Number SG*23N60
Element Configuration Single
Power Dissipation 100W
Input Type Standard
Power - Max 100W
Collector Emitter Voltage (VCEO) 600V
See Relate Datesheet

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