Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-75A |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 700MOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW THRESHOLD |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 150mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150mW |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 700m Ω @ 600mA, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 500mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±6V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 600mA |
Threshold Voltage | 800mV |
Gate to Source Voltage (Vgs) | 6V |
Drain Current-Max (Abs) (ID) | 0.5A |
Drain to Source Breakdown Voltage | 20V |
Max Junction Temperature (Tj) | 150°C |
Height | 800μm |
Length | 1.58mm |
Width | 760μm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |