SI1013X-T1-GE3
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±6V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | -400mA |
| Threshold Voltage | -450mV |
| Gate to Source Voltage (Vgs) | 6V |
| Drain to Source Breakdown Voltage | -20V |
| Height | 800μm |
| Length | 1.7mm |
| Width | 950μm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Number of Pins | 3 |
| Weight | 29.993795mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 1.2Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 250mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250mW |
| Turn On Delay Time | 5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 250μA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 350mA Ta |
See Relate Datesheet
