SI1062X-T1-GE3
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 220mW |
| Turn On Delay Time | 2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 8V |
| Rise Time | 14ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 530mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Number of Pins | 3 |
| Weight | 29.993795mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 420mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 220mW Ta |
See Relate Datesheet
