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SI1308EDL-T1-GE3

VISHAY - SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI1308EDL-T1-GE3
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 612
  • Description: VISHAY - SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 124.596154mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 132mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400mW Ta 500mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 132m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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