SI1416EDH-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28.009329mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.8W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.56W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 60ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 3.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.058Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
