Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 6 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.5W Ta 2.78W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.5W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 80m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Continuous Drain Current (ID) | 3.2A |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 2.7A |
Drain-source On Resistance-Max | 0.08Ohm |
Pulsed Drain Current-Max (IDM) | 8A |
DS Breakdown Voltage-Min | 20V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Weight | 7.512624mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |