Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 10V |
Rise Time | 65ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 11 ns |
Continuous Drain Current (ID) | 4.5A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Factory Lead Time | 1 Week |
Drain to Source Breakdown Voltage | 30V |
Mount | Surface Mount |
Height | 1.02mm |
Mounting Type | Surface Mount |
Length | 3.04mm |
Width | 1.4mm |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Radiation Hardening | No |
REACH SVHC | Unknown |
Number of Pins | 3 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 50MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.25W Ta 1.66W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 20 ns |