Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 250mOhm |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 730mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 730mW |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 250m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 1.15A Ta |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 9 ns |
Continuous Drain Current (ID) | 1.15A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 2 V |
Height | 1.12mm |
Length | 3.04mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |