SI2399DS-T1-GE3
| Parameters | |
|---|---|
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -600 mV |
| Height | 1.12mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 22 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 34m Ω @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 835pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | -6A |
| Threshold Voltage | -600mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | -20V |
See Relate Datesheet
