Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 19.986414mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 750mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Max Output Current | 2A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2W Ta 3.2W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 750m Ω @ 1.4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 1.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Rise Time | 29ns |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 1.1A |
Threshold Voltage | -4V |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 5A |
Dual Supply Voltage | -150V |
Nominal Vgs | -4 V |
Height | 1mm |
Length | 3.05mm |
Width | 1.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |