banner_page

SI3437DV-T1-GE3

MOSFET P-CH 150V 1.4A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI3437DV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 323
  • Description: MOSFET P-CH 150V 1.4A 6-TSOP (Kg)

Details

Tags

Parameters
Fall Time (Typ) 14 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 1.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.75Ohm
Drain to Source Breakdown Voltage -150V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good