Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 60m Ω @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
Rise Time | 35ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 25 ns |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 3.6A |
Threshold Voltage | -1.4V |
Contact Plating | Tin |
Gate to Source Voltage (Vgs) | 12V |
Mount | Surface Mount |
Drain to Source Breakdown Voltage | -20V |
Nominal Vgs | -1.4 V |
Mounting Type | Surface Mount |
Height | 990.6μm |
Length | 3.05mm |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Width | 1.65mm |
Radiation Hardening | No |
Number of Pins | 6 |
REACH SVHC | No SVHC |
Weight | 19.986414mg |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 60mOhm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 6 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.1W |
Turn On Delay Time | 22 ns |
FET Type | P-Channel |