Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 19.986414mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | TrenchFET® |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 60mOhm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 6 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2W Ta 3.2W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.2W |
Turn On Delay Time | 27 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 60m Ω @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 5.97A Tc |
Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 5V |
Rise Time | 59ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 3.9A |
Threshold Voltage | -600mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 5.97A |
Drain to Source Breakdown Voltage | -20V |
Nominal Vgs | -600 mV |
Height | 1mm |
Length | 3.05mm |
Width | 1.65mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |