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SI3460BDV-T1-E3

MOSFET N-CH 20V 8A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI3460BDV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 626
  • Description: MOSFET N-CH 20V 8A 6-TSOP (Kg)

Details

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Parameters
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Max Output Current 2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 20V
Nominal Vgs 1 V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 27mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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