Parameters | |
---|---|
Power Dissipation | 2W |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 126m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 196pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 3.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
Rise Time | 68ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 2.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 3.8A |
Drain to Source Breakdown Voltage | 100V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.6W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |