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SI3474DV-T1-GE3

MOSFET N-CH 100V 3.8A TSOP-6


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI3474DV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 236
  • Description: MOSFET N-CH 100V 3.8A TSOP-6 (Kg)

Details

Tags

Parameters
Power Dissipation 2W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 126m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 196pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.8A
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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