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SI3475DV-T1-GE3

Trans MOSFET P-CH 200V 0.75A 6-Pin TSOP T/R


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI3475DV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 855
  • Description: Trans MOSFET P-CH 200V 0.75A 6-Pin TSOP T/R (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 950mA Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 29ns
Fall Time (Typ) 14 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.95A
Drain to Source Breakdown Voltage 200V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.61Ohm
Terminal Finish PURE MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 3.2W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.61 Ω @ 900mA, 10V
See Relate Datesheet

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