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SI4062DY-T1-GE3

MOSFET 60V 4.2mOhm@10V 32.1A N-CH


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI4062DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 904
  • Description: MOSFET 60V 4.2mOhm@10V 32.1A N-CH (Kg)

Details

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Parameters
Number of Terminations 8
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 7.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 30V
Current - Continuous Drain (Id) @ 25°C 32.1A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 105ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 32.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet

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