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SI4124DY-T1-GE3

MOSFET N-CH 40V 20.5A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI4124DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 439
  • Description: MOSFET N-CH 40V 20.5A 8-SOIC (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 5.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3540pF @ 20V
Current - Continuous Drain (Id) @ 25°C 20.5A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 13.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20.5A
Drain-source On Resistance-Max 0.0075Ohm
DS Breakdown Voltage-Min 40V
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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