SI4435DYPBF
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 8A |
| Mounting Type | Surface Mount |
| Drain-source On Resistance-Max | 0.02Ohm |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Pulsed Drain Current-Max (IDM) | 50A |
| Surface Mount | YES |
| DS Breakdown Voltage-Min | 30V |
| Transistor Element Material | SILICON |
| RoHS Status | ROHS3 Compliant |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 15V |
See Relate Datesheet
