Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 295m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 2.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Rise Time | 28ns |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 52 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2A |
Height | 1.55mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 186.993455mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 295mOhm |
Terminal Finish | PURE MATTE TIN |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.1W Ta 5.9W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Turn On Delay Time | 11 ns |
FET Type | P-Channel |