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SI4477DY-T1-GE3

VISHAY SI4477DY-T1-GE3 MOSFET Transistor, P Channel, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI4477DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 955
  • Description: VISHAY SI4477DY-T1-GE3 MOSFET Transistor, P Channel, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V (Kg)

Details

Tags

Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3W Ta 6.6W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 42 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 26.6A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 42ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) -26.6A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0062Ohm
Drain to Source Breakdown Voltage -20V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
See Relate Datesheet

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