Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 506.605978mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 50mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.56W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.56W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 50m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA (Min) |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Rise Time | 7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 22 ns |
Continuous Drain Current (ID) | 5A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 150V |
Nominal Vgs | 2 V |
Height | 1.5494mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |