Parameters | |
---|---|
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.1W Ta 6.9W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.5m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4620pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 17.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Continuous Drain Current (ID) | 17.3A |
JEDEC-95 Code | MS-012AA |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.0065Ohm |
DS Breakdown Voltage-Min | 30V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | TrenchFET® |