SI4497DY-T1-GE3
| Parameters | |
|---|---|
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 3.3mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.5W Ta 7.8W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.5W |
| Turn On Delay Time | 19 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9685pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 36A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 115 ns |
| Continuous Drain Current (ID) | -24.8A |
| Threshold Voltage | -2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 36A |
| Drain to Source Breakdown Voltage | -30V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1 V |
| Height | 1.75mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
See Relate Datesheet
