Parameters | |
---|---|
Rds On Max | 3 mΩ |
Height | 1.55mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Supplier Device Package | 8-SO |
Weight | 186.993455mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | SkyFET®, TrenchFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 3mOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.5W Ta 7.8W Tc |
Power Dissipation | 7.8W |
Turn On Delay Time | 28 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 38A Tc |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Rise Time | 20ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 39 ns |
Continuous Drain Current (ID) | 38mA |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Input Capacitance | 3.45nF |
Drain to Source Resistance | 2.4mOhm |