SI4800BDY-T1-GE3
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 9A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 25 V |
| Height | 1.55mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 186.993455mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 18.5mOhm |
| Terminal Finish | MATTE TIN |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18.5m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Rise Time | 12ns |
See Relate Datesheet
