SI4864DY-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 25A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Continuous Drain Current (ID) | 25A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.0035Ohm |
| Drain to Source Breakdown Voltage | 20V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
