Parameters | |
---|---|
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 5.3mOhm |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 4.45W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.3m Ω @ 12A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5020pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 21.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 57 ns |
Continuous Drain Current (ID) | 16.1A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | 12V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.75mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 186.993455mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |