SI5415AEDU-T1-GE3
| Parameters | |
|---|---|
| Package / Case | PowerPAK® ChipFET™ Single |
| Number of Pins | 8 |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 31W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.1W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 9.6m Ω @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 8V |
| Rise Time | 45ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 25A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
See Relate Datesheet
