SI5429DU-T1-GE3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 31W |
| Turn On Delay Time | 35 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Height | 850μm |
| Length | 3.08mm |
| Width | 1.98mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
