SI5445BDC-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 33mOhm |
| Terminal Finish | MATTE TIN |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 5.2A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -8V |
| Height | 1.0922mm |
| Length | 3.0988mm |
| Width | 1.7018mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
