SI5448DU-T1-GE3
| Parameters | |
|---|---|
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 15.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 850μm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Single |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 31W Tc |
| Power Dissipation | 3.1W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.75m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -16V |
See Relate Datesheet
