SI5461EDC-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 45mOhm |
| Terminal Finish | MATTE TIN |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 2.5 μs |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 250μA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 4.5μs |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4.5 μs |
| Turn-Off Delay Time | 27 μs |
| Continuous Drain Current (ID) | -6.2A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -20V |
| Height | 1.0922mm |
| Length | 3.0988mm |
| Width | 1.7018mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
