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SI5476DU-T1-GE3

MOSFET N-CH 60V 12A PPAK CHIPFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI5476DU-T1-GE3
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 834
  • Description: MOSFET N-CH 60V 12A PPAK CHIPFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 30V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 25A
Height 750μm
Length 3mm
Width 1.9mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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