SI6435ADQ-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 30mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.05W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 4.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 4.7A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| Nominal Vgs | -1 V |
| Height | 1.0414mm |
| Length | 4.4958mm |
| Width | 3.0988mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
