SI6463BDQ-T1-GE3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 8 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 35 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 7.4A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 6.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 190 ns |
| Continuous Drain Current (ID) | -7.4A |
| Threshold Voltage | -800mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
