Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -50°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 1.05Ohm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
JESD-30 Code | S-XDSO-C5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.7W Ta 52W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.7W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.05 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 666pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 3.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | -3.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -200V |
Pulsed Drain Current-Max (IDM) | 5A |
Height | 1.04mm |
Length | 3.05mm |
Width | 3.05mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |