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SI7121ADN-T1-GE3

MOSFET P-CH 30V D-S PPAK 1212-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7121ADN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 997
  • Description: MOSFET P-CH 30V D-S PPAK 1212-8 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 12.5mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7121
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 27.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) -18A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 50A
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
See Relate Datesheet

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