Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -50°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 12.5mOhm |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | SI7121 |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.5W Ta 27.8W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 38 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 15m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Rise Time | 34ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 24 ns |
Continuous Drain Current (ID) | -18A |
Threshold Voltage | -2.5V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | -30V |
Pulsed Drain Current-Max (IDM) | 50A |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |